METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor devices in which the number of steps and the manufacturing cost can be reduced even if a plurality of devices having different structures and functions are formed as a single chip. SOLUTION: The memthod for manufacturing a semiconductor devices comprises a first step for forming a first layer polysilicon film and then forming the polysilicon electrodes 202a and 204a of a first device and the polysilicon electrodes 201a and 203a of a third device; a second step for forming an insulating film 6 composed of a silicon oxide film and a silicon nitride film; a third step for exposing a semiconductor substrate by removing the insulating film 6 except for regions for forming the first and third devices; and a fourth step for forming a second layer polysilicon film on the semiconductor substrate from which the insulating film 6 is removed and then forming the polysilicon electrodes 201b and 203b of the third device and the polysilicon electrodes 205b-208b of the second devices 205-208 on the semiconductor substrate from which the insulating film 6 is removed. COPYRIGHT: (C)2004,JPO