| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film forming method which removes deposits of a reaction product on an electrode in a short period of time, without stopping a manufacturing process, can improve a manufacturing efficiency and form a film of high quality, and to provide an apparatus therefor. SOLUTION: In the thin-film forming apparatus provided with a vacuum treatment chamber 1 having an exhaust line 3, a substrate holder for arranging a substrate in a predetermined position in the vacuum treatment chamber, a pair of electrodes consisting of a high-frequency electrode 5 and a ground electrode 4, a gas introduction pipe 2 for introducing a predetermined film-forming gas and a hydrogen gas into a vacuum treatment chamber, and a high-frequency voltage application means, this apparatus comprises a thermal catalyst body 6 for generating active species of a hydrogen gas during cleaning treatment, and a vacuum introducing device 7 installed on the side wall of the above vacuum treatment chamber for moving the thermal catalyst body to a region of forming discharge plasma during cleaning treatment, and to a predetermined position outside the region of forming discharge plasma during thin-film formation. COPYRIGHT: (C)2004,JPO
|
