| 摘要 |
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with copper and then planarized. The electrically conductive material is provided an upper surface that is recessed relative to the upper surface of the layer of insulating material. A cap, which can be conductive (e.g., Ta) or resistive (e.g., TiAIN), is disposed over the electrically conductive material and within the groove. A surface of the cap that faces away from the electrically conductive material, is formed with an elevation substantially equal to that of the edge of the liner, or the cap can extend over the liner edge. At least one layer of magneto-resistive material is disposed over a portion of the cap. Advantageously, the cap can protect the copper line from harmful etch processes required for etching a MRAM stack, while keeping the structure planar after CMP.
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