发明名称 |
Semiconductor device using an interconnect |
摘要 |
The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
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申请公布号 |
US2004026786(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030635892 |
申请日期 |
2003.08.05 |
申请人 |
INTEL CORPORATION |
发明人 |
LEU JIHPERNG;THOMAS CHRISTOPHER D. |
分类号 |
H01L21/288;H01L21/768;H01L23/528;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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