| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming material which enables a resist pattern with an excellent pattern shape to be formed even when extreme ultraviolet rays are applied by using an ordinary optical system and to provide a pattern forming method using the same material. <P>SOLUTION: A resist film 11 made of a chemical amplification resist material is formed. The chemical amplification resist material comprises a polymer that changes the solubility to a developer in the presence of acid, an acid producing agent that produces acid when the exposure light is applied and a base producing agent that produces base when the exposure light is applied. Further, in the base producing agent, when the extreme ultraviolet rays or the long-wavelength band light having a wavelength band longer than the extreme ultraviolet rays which has equal exposure energy as exposure light is applied, the irradiation of the long-wavelength light gives the amount of photosensitivity more than that in the case of the irradiation of the extreme ultraviolet rays. The extreme ultraviolet rays 12 are selectively applied to the resist film 11, the pattern exposure is performed, thereafter, the resist film 11 is developed and the resist pattern 13 is formed. <P>COPYRIGHT: (C)2004,JPO |
