| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal-wiring forming method inhibiting the sticking of a product of polishing to a polishing pad and forming an uniform wiring layer at high throughput even in the case of polishing a large quantity of copper-based metals in a polishing process. SOLUTION: In a metal-wiring forming method having a process of forming recesses in an insulation film 1 that is formed on a substrate, a process of forming a copper-based metal film 2 on the entire surface in such a manner as to fill the recess, and a process of polishing the copper-based metal film by a chemical mechanical polishing method, the polishing process uses a chemical mechanical polishing slurry containing abrasives, an oxidizing agent, and citric acid. A polishing pad is contacted with a polishing surface at a pressure of 27kPa or above to perform polishing. COPYRIGHT: (C)2004,JPO
|
