| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device which obtains high reliability and proper operating characteristics of a TMR (tunnel magnetoresistive) element. SOLUTION: The magnetic memory device is provided with a transistor Q formed on a semiconductor substrate, a tunnel magnetoresistive element VR formed on an interlayer insulating film covering the transistor Q, a first wiring 31 arranged on the source/drain diffusion layer of the transistor Q embedded in the interlayer insulating film, a writing word line 41a on a second layer metal embedded above the first wiring 31 in the interlayer insulating film and below the tunnel magnetoresistive element VR, and a bit line 61 of a third layer metal connected to the upper surface of the tunnel magnetoresistive element VR and arranged so as to intersect with the writing word line 41a whose both edges are formed by pattern forming so as to be positioned outside the pattern of the tunnel magnetoresistive element VR. COPYRIGHT: (C)2004,JPO
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