发明名称 DRY ETCHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prolong the operating life time of apparatus which can be applied to the etching process using different kinds of reaction gases, does not bring about reduction in a net working rate thereof resulting from the change of a discharge bulb and is capable of controlling the wearing of an expensive quartz discharge bulb. SOLUTION: This dry etching apparatus comprises a first plasma generating unit (20A) having a quartz discharge bulb (22A), a second plasma generating unit (20B) having an alumina discharge bulb (22B), a first reaction gas supplying unit (30A) for supplying a reaction gas which does not contain fluorine to the quartz discharge bulb (22A) of the first plasma generating unit (20A), a second reaction gas supplying unit (30B) for supplying a reaction gas containing fluorine to the alumina discharge bulb (22B) of the second plasma generating unit (20B) and a controller (38) for selectively operating either of the first plasma generating unit (20A) and the second plasma generating unit (20B). COPYRIGHT: (C)2004,JPO
申请公布号 JP2004047559(A) 申请公布日期 2004.02.12
申请号 JP20020200183 申请日期 2002.07.09
申请人 SHIBAURA MECHATRONICS CORP 发明人 YONEMOTO KIMIHIKO
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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