发明名称 |
Semiconductor devices having strained dual channel layers |
摘要 |
A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.
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申请公布号 |
US2004026765(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030456926 |
申请日期 |
2003.06.06 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J.;LEITZ CHRISTOPHER W.;FITZGERALD EUGENE A. |
分类号 |
H01L21/20;H01L21/336;H01L21/337;H01L21/8238;H01L29/10;H01L29/80;(IPC1-7):H01L31/117 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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