发明名称 |
Test structure for locating electromigration voids in dual damascene interconnects |
摘要 |
A test structure is disclosed for locating electromigration voids in a semiconductor interconnect structure having an interconnect via interconnecting a lower metallization line with an upper metallization line. In an exemplary embodiment, the test structure includes a via portion the top of the interconnect via at the upper metallization line. In addition, a line portion extends from the via portion, wherein the line portion connects to an external probing surface, in addition to a probing surface on the lower metallization line, thereby allowing the identification of any electromigration voids present in the interconnect via.
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申请公布号 |
US2004026693(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20020214546 |
申请日期 |
2002.08.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MCLAUGHLIN PAUL S.;SULLIVAN TIMOTHY D.;WANG PING-CHUAN |
分类号 |
H01L23/544;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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