| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a degree of resolution facility suitable for exposure conditions and to realize shifter arrangement that is high in resolution in a Levenson type phase shift mask. <P>SOLUTION: In the method for designing a Levenson type photomask in which a plurality of aperture patterns are formed for transmitting incident light to a part of a film that shields incident light, with a phase shifter installed in a part of these patterns; line segment pairs of different patterns adjacent within a distance R are extracted by each line segment to which the patterns are broken down. Then, the patterns are obtained that cross the line segment within a distance S vertically from the intermediate point 13 of the opposing region 12 where the objective segment pairs 11 face each other. With a process simulation performed for the patterns so obtained, the degree of resolution facility is determined which is an indication of facility in resolving adjacent patterns. On the basis of the degree of resolution facility obtained on the pairs of adjacent patterns within the distance R, the phase shifter is arranged, in the manner giving phase contrast according to priority in order of resolution difficulty. <P>COPYRIGHT: (C)2004,JPO</p> |
