| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface emitting semiconductor laser, capable of accurately controlling the reaction of oxidation reaction of III-V semiconductor layer containing aluminum. SOLUTION: The manufacturing method comprises the steps of forming a first and second mesas (210, 310) with a side of the III-V semiconductor layer containing aluminum exposing on a substrate, exposing the first and second mesas in an oxidizing atmosphere at a predetermined temperature or lower, optically monitoring the oxidation state of the III-V semiconductor layer containing aluminum of the first mesa, and controlling the oxidized region of the III-V semiconductor layer containing alminum of the second mesa, on the basis of the result of monitoring to form a current constricting part (10). COPYRIGHT: (C)2004,JPO
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