| 摘要 |
PROBLEM TO BE SOLVED: To shorten the gate length of a junction field effect transistor. SOLUTION: An insulating film 30 is formed on a semiconductor substrate where a channel layer 20 is formed by a CVD method, etc. for patterning with a resist, and a gate opening 31 is formed using an RIE, etc. With the insulating film 30 as a mask, a semiconductor layer (channel layer 20) exposed through the gate opening 31 is wet-etched to form a recess. Here, an etchant having strong selectivity in crystalline plane orientation is used so that a recessed sidewall is made to have a normal mesa form. With the insulating film 30 as a mask, a p-type impurity such as Zn is diffused to the semiconductor recess from the gate opening to form a gate diffusion layer 40. COPYRIGHT: (C)2004,JPO
|
