| 摘要 |
PROBLEM TO BE SOLVED: To provide film-forming equipment for forming an oxide film, a nitride film or an oxynitride film on a semiconductor substrate at a low film-formation temperature without damaging the substrate. SOLUTION: The film-forming equipment is provided with a dielectric window 14 introducing a micro-wave to chambers 11 and 31, a gas-dispersing plate 21 provided to be separated from the dielectric window 14 in the chambers 11 and 31 on the other face side of the dielectric window 14 and opening a plurality of circulation holes 21a, and a reaction gas supply source. A reaction gas is exposed on the surface wave of the microwave dissociated so as to produce an excitated species. The excitated species of the reaction gas is passed through the circulation holes 21a to form an oxide film, a nitride film or an oxynitride film on the substrate W installed in the downstream of the circulation holes 21a. COPYRIGHT: (C)2004,JPO
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