发明名称 METHOD FOR DETECTING ABNORMALITY OF PROCESSOR
摘要 PROBLEM TO BE SOLVED: To solve the problem wherein important abnormalities cannot be detected for all wafers, because a baseline formed by the residual scores of each wafer subjected to maintenance and inspection deviates from a baseline formed by the residual scores of each wafer not being subjected to maintenance and inspection, and because it exceeds abnormality decision line and decides the process of a processor as being abnormal. SOLUTION: The method for detecting abnormalities comprises a step for obtaining the emission intensity S of a plasma being detected for each of a plurality of wafers using an end point detector 19 which is not subjected to maintenance and inspection as first operation data; a step for determining a residual matrix by analyzing the main components of the first operation data; a step for setting the abnormality decision line L of a processor based on the square sum (residual score) of the residual components of the residual matrix; a step for obtaining the emission intensity S being detected for each wafer, using a detector subjected to maintenance and inspection as second operation data; a step for determining a residual matrix, based on the analysis of main component of the second operation data; and a step for determining a residual score by comparing the second operation data with the first operation data and selecting the operation data, having a smaller variation of residue. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004047501(A) 申请公布日期 2004.02.12
申请号 JP20020169465 申请日期 2002.06.11
申请人 TOKYO ELECTRON LTD 发明人 SAKANO SHINJI;HARADA SATOSHI
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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