LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To improve reliability of a light emitting device where a TFT is coupled with an organic light emitting element. SOLUTION: A thin-film transistor and a light emitting element are provided. A second inorganic insulator layer is provided on the upper layer side of a gate electrode. A first organic insulator layer is provided on the second inorganic insulator layer. A third inorganic insulator layer is provided on the first organic insulator layer. An anode layer is formed on the third inorganic insulator layer. A second organic insulator layer overlaps, at a tilt angle of 35-45°, with the end of the wiring layer. A fourth inorganic insulator layer is formed on the front surface and the side surface of the second organic insulator layer, and comprises an opening on the anode layer. An organic compound layer is formed to contact the anode layer, and the fourth inorganic insulator layer and comprises a light emitting body. A cathode layer is formed to contact the organic compound layer containing the light emitting body. The third inorganic insulator layer and the fourth inorganic insulator layer are formed from silicon nitride or aluminum. COPYRIGHT: (C)2004,JPO