| 摘要 |
A semiconductor integrated circuit device with built-in spark killer diodes suitable for output transistor protection has a problem such that a leakage current to the substrate is great and a desirable forward current cannot be obtained. In a semiconductor integrated circuit device of the present invention, P<+>-type first and second diffusion regions 34 and 32 are formed on the surface of a second epitaxial layer 23 in a partly overlapping manner. And, by a connection to an anode electrode 39 at a part immediately over the P<+>-type second diffusion region 32, a parasitic resistance R1 is made greater than a parasitic resistance R2. Thus, an operation of a parasitic transistor TR2 that causes a leakage current to a substrate 21 is suppressed, whereby leakage current can be greatly reduced.
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