| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reflow crack resistance of a large-scale integrated circuit device. <P>SOLUTION: A method for manufacturing the large-scale integrated circuit device includes a step of preparing a lead frame 1, having a plurality of inner leads disposed so as to surround a die pad 3 partly connected to the rear surface of a semiconductor chip 2 to be placed on the die pad 3 and the chip 2 placed on the pad 3, a step of coating a plurality of positions of the pad 3 of the prepared frame 1, a step of adhering the chip 2 having a plurality of electrodes on a surface with an adhesive 15 coating on the plurality of the positions to the pad 3 via the adhesive 15, a step of connecting the plurality of the electrodes of the chip 2 to the plurality of the inner leads, and a step of sealing the chip 2, the plurality of the inner leads and the pad 3 with a resin. <P>COPYRIGHT: (C)2004,JPO |
