发明名称 RESIST MATERIAL AND METHOD FOR PATTERN FORMATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist material, particularly a chemical amplification positive type resist material having higher sensitivity, resolution, exposure margin and process adaptability than a conventional resist material, ensuring a good pattern shape after exposure and exhibiting excellent heat stability. <P>SOLUTION: The resist material contains a high molecular compound containing repeating units shown by formula (1) and having a weight average molecular weight of 1,000 to 500,000 (wherein R<SP>1</SP>and R<SP>2</SP>are H, a hydroxy group, an alkyl group, a halogen atom, or a trifluoromethyl group, R<SP>3</SP>is a methyl group or an ethyl group; R<SP>4</SP>and R<SP>5</SP>are an alkyl group, and R<SP>4</SP>and R<SP>5</SP>may combine with each other to form a cyclic structure). <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004045448(A) 申请公布日期 2004.02.12
申请号 JP20020195740 申请日期 2002.07.04
申请人 SHIN ETSU CHEM CO LTD 发明人 TAKEDA TAKANOBU;WATANABE OSAMU
分类号 G03F7/027;C08F20/26;C08F212/04;G03F7/039;H01L21/027 主分类号 G03F7/027
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