| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a forming method for a metal wiring capable of forming a metal wiring excellent in adhesion and EM resistance on an insulating layer. <P>SOLUTION: There are provided a process for forming a trench 103 in an insulating layer 102; a process for forming an admixture-containing barrier layer 104 thereon; a process for forming a metal seed layer 105 thereon, a process for forming a metal material layer 106 thereon; a process for applying a heat treatment at a first temperature capable of promoting growth of crystal particles of the metal seed layer 105 and the metal material layer 106; a process for forming a conductive layer 107 comprising the metal seed layer 105 and the metal material layer 106 left behind in the trench 103 by removing a part of the admixture-containing barrier layer 104, the metal seed layer 105, and the metal material layer 106; and a process for forming an admixture-containing conductive layer (metal wiring) 108 by applying a heat treatment at a second temperature capable of diffusing an added element in the admixture-containing barrier layer 104 into the conductive layer 107. <P>COPYRIGHT: (C)2004,JPO</p> |
