| 摘要 |
A method of forming self-aligned MRAM contact is disclosed. MRAM stacks including an upper of a conductive material are formed over portions of integraed circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The insulating material is subsequently chemically mechanically polished or etched, stopping on the upper layer of conductive material, to expose of the conductive material which are used to self-alinged MRAM contacts. |
