Structurization of process area inclined or perpendicular to substrate surface, used in trench in semiconductor, especially in capacitor production, involves depositing liner of uniform thickness from precursors only in upper part

摘要

Structurization of process area (2) of substrate (1) with relief, inclined and/or perpendicular to horizontal substrate surface (101) and extending into relief to given coating depth (102) between relief depth (103) and substrate surface, involves depositing liner (3) from precursors in process chamber; limited deposition of at least one precursor and coating in uniform thickness almost only on upper part between substrate surface and coating depth.