发明名称 |
Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature |
摘要 |
Oxidizing a layer comprises preparing a substrate (114) supporting a layer to be oxidized which is part of a layer stack containing the substrate or base layer and a neighboring layer formed on the surface of the layer to be oxidized facing the base surface, inserting the substrate carrying the layer stack into a heating unit (80), feeding an oxidation gas onto the substrate, heating the substrate to a process temperature, acquiring the process temperature during processing via the substrate of a receiving unit (110) for the substrate, and regulating or controlling the substrate temperature at a prescribed theoretical temperature during processing. An Independent claim is also included for a receiving unit having a recess (124) for an exchangeable ring (128) for the substrate. |
申请公布号 |
DE10234694(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
DE2002134694 |
申请日期 |
2002.07.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
CHUNG, HIN-YIU;GUTT, THOMAS |
分类号 |
H01L21/00;H01L21/316;H01L21/322;H01L21/324;H01L21/687;H01S5/183 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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