发明名称 Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature
摘要 Oxidizing a layer comprises preparing a substrate (114) supporting a layer to be oxidized which is part of a layer stack containing the substrate or base layer and a neighboring layer formed on the surface of the layer to be oxidized facing the base surface, inserting the substrate carrying the layer stack into a heating unit (80), feeding an oxidation gas onto the substrate, heating the substrate to a process temperature, acquiring the process temperature during processing via the substrate of a receiving unit (110) for the substrate, and regulating or controlling the substrate temperature at a prescribed theoretical temperature during processing. An Independent claim is also included for a receiving unit having a recess (124) for an exchangeable ring (128) for the substrate.
申请公布号 DE10234694(A1) 申请公布日期 2004.02.12
申请号 DE2002134694 申请日期 2002.07.30
申请人 INFINEON TECHNOLOGIES AG 发明人 CHUNG, HIN-YIU;GUTT, THOMAS
分类号 H01L21/00;H01L21/316;H01L21/322;H01L21/324;H01L21/687;H01S5/183 主分类号 H01L21/00
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