| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify a manufacturing process by reducing the number of photomechanical processes and anisotropic dry etching, and to prevent the manufacturing process from being complicated and the occurence of defects in contact plugs due to an etching stopper film in a region where a capacitor is not formed. <P>SOLUTION: In this manufacturing method, opening parts OP3 penetrating at least an interlayer insulating film 5 are formed by anisotropic dry etching using a resist mask RM2. After the etching stopper film 4 is exposed at the bottoms of the opening parts OP3, anisotropic dry etching shall be continued, and using the etching stopper film as an etching mask, contact holes CH1 penetrating an interlayer insulating film 3 to source, drain regions 11, 13 are formed, thereby obtaining the opening parts OP3 and the contact holes CH1 simultaneously in the same etching process. <P>COPYRIGHT: (C)2004,JPO |
