CHEMICAL MECHANICAL POLISHING(CMP) APPARATUS AND METHOD USING HEAD HAVING WAFER POLISH PRESSURE SYSTEM OF DIRECT ATMOSPHERIC-PRESSURE TYPE

摘要

PROBLEM TO BE SOLVED: To provide a polishing apparatus, a polishing head and a polishing method for improving the uniformity in polishing of a substrate in the vicinity of the end of the substrate, which will be useful to improve the uniformity in polishing of a semiconductor wafer.

SOLUTION: An annular sealed bladder of an elastic pneumatic pressure type (550) defines a first pressure zone (556) by being connected so as to be fluid-communicated with a first compressed gas, and receives and supports the circumferential part of a wafer (113) by being connected to a first surface (562) of a stopping plate (554) of a wafer in close proximity to the inner cylindrical surface of a retaining ring (166). The bladder defines a second pressure zone inside the first pressure zone in the radial direction and extends between the first surface of the wafer stopping plate and wafer when the wafer is connected to the polish head and combined so as to be fluid-communicated with a second compressed gas during polishing, and the first and second compressed gases are adjusted so that a predetermined polishing pressure is obtained on the front surface of the wafer.

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