SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element which is equipped with a element constituting layer having good crystallinity and is excellent in property.

SOLUTION: The semiconductor element is provided with an element constituting layer 20 composed of a nitride semiconductor on the substrate 1. A first buffer layer 2A formed at a low temperature lower than a single crystal growth temperature and a second buffer layer 2B containing no Ga nor In adjacent to the first buffer layer 2A are formed on the substrate 1 in the order, and the element constituting layer 20 is formed on the second buffer layer 2B.

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