METHOD AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To pull a large size and large weight single crystal semiconductor without adding a significant alteration to an existing apparatus, without affecting the oxygen concentration in the single crystal semiconductor and the temperature of a melt and without elevating the temperature of the seed crystal more than needed. SOLUTION: The relations L1, L2 and L3 between a permissible temperature differenceΔT and the diameter D of a seed crystal 14 are preset in such a manner that the temperature difference between the seed crystal 14 and the melt 5 when the seed crystal 14 lands on the melt 5 attains the permissible temperature differenceΔT at which dislocation is not introduced into the seed crystal 14. The permissible temperature differenceΔT corresponding to the diameter D of the seed crystal 14 going to land on the liquid is determined in accordance with the relations L1, L2 and L3. The temperature is so regulated that the temperature difference between the seed crystal 14 and the melt 5 attains the determined permissible temperature differenceΔT or below when the seed crystal 14 lands on the melt 5. COPYRIGHT: (C)2004,JPO