| 摘要 |
In a semiconductor device wherein at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type are layered on a substrate, and electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type; and a first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, respectively, and the second electrode surrounds the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed, inside from the outline of the first electrode. According to such a structure, it is possible to realize the device having high luminous efficiency for usage and high reliability.
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