| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electro-optical device and a semiconductor device which are each equipped with a joint, having a structure that is restrained from reducing itself in reliability and capable of coping with increase in the degree of integration. <P>SOLUTION: The joint 31 comprises first conductive layers 32a, 32b, and 32c formed on a first insulating film 39, a second insulating film 40 formed so as to cover the first conductive layers 32a, 32b, and 32c, a second conductive layer 33 formed on the second insulating film 40, and a contact hole 34 penetrating through the second insulating film 40 and the first insulating film 39. The first conductive layers 32a, 32b and 32c and the second conductive layer 33 are brought into contact with each other on the side face of the contact hole, to enable these interconnect lines to be electrically connected together. An etching stop layer 35, having resistance to etching performed on the first insulating film, is provided in a region located on the bottom of the contact hole 34. <P>COPYRIGHT: (C)2004,JPO</p> |
