| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor laser employing a nitride-based III-V compound semiconductor in which a high output can be easily ensured. SOLUTION: After the formation of an underlying layer (a p-side clad layer 42) between an active layer 30 and a p-side electrode 52 as a part of a p-type semiconductor layer 40, a p-side contact layer 43 is formed on the p-side clad layer 42. At least one end of the p-side contact layer 43 in the direction of a resonator is then removed selectively by reactive ion etching (RIE) to form a current non-injection region (a damaged layer). Subsequently, a p-side electrode 52 is formed on the p-side contact layer 43 and on an etching region. By the current non-injection region, non-emission recombination is prevented effectively on the end faces 1a and 1b of the resonator and in the vicinity thereof, and COD is prevented. COPYRIGHT: (C)2004,JPO
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