| 摘要 |
PROBLEM TO BE SOLVED: To improve margin of CMP processing to form the STI in a NAND-type flash memory, in which the gate is formed first. SOLUTION: For example, a cell array 21 is formed, using a Vcc oxide film 21a having a first thickness. A row decoder circuit 31, adjacent to this cell array 21, is formed by using a Vpp oxide film 31a having a second thickness which is thicker than the Vcc oxide film 21a. Moreover, a guard ring 41 and a dummy AA pattern 51, provided adjacent to the row decoder circuit 31, are formed respectively using the Vpp oxide films 41a, 51a of identical thickness to that of the Vpp oxide film 31a. COPYRIGHT: (C)2004,JPO
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