| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method, wherein photoelectric characteristic is controlled with respect to aβ-FeSi<SB>2</SB>or amorphous iron silicide semiconductor. SOLUTION: The iron silicide semiconductor thin film is constituted, by changing optical band gap through hydrogenation. Alternatively, the same is constituted by controlling a carrier concentration through hydrogenation. Or the iron silicide semiconductor thin film is manufactured by a method, wherein hydrogen is mixed into a thin film, grown by the inflow of hydrogen gas into atmosphere upon forming the film to hydrogenate theβ-FeSi<SB>2</SB>or the amorphous FeSi<SB>X</SB>in the thin film growing method of theβ-FeSi<SB>2</SB>or the amorphous FeSi<SB>X</SB>. COPYRIGHT: (C)2004,JPO
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