| 摘要 |
<P>PROBLEM TO BE SOLVED: To remarkably reduce the dislocation density of a nitride semiconductor formed on a substrate. <P>SOLUTION: A method for manufacturing the nitride semiconductor includes steps of epitaxially growing a III-V-IV mixed crystal buffer layer 2 represented by a formula (In<SB>a</SB>Al<SB>b</SB>Ga<SB>c</SB>N)<SB>x</SB>Si<SB>y</SB>(a≥0, b≥0, c≥0, x>0, y>0, a+b+c=1, and x+y=1) on a single-crystal insulating substrate 1 by alternatively supplying a group III raw material, a group V raw material, and a group IV raw material to the surface of the substrate, and forming a nitride semiconductor layer 3 having a crystal structure of a single crystal on the buffer layer 2 by an epitaxial growing method. <P>COPYRIGHT: (C)2004,JPO |
