| 摘要 |
In a field-effect transistor, an electric field is produced above the gate dielectric, and generates a tunneling current through the gate dielectric. The tunneling current, lying below the breakdown charge of the gate dielectric, leads to the formation of stationary charges in the gate dielectric, which can alter the threshold voltage of the field-effect transistor. Thus, customary field-effect transistors can be programmed and, in particular, used for storing data values.
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