发明名称 METHOD OF ETCHING SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To make flatness which is macroscopic geometrical precision and surface roughness which is microscopic precision of a silicon wafer satisfactory. SOLUTION: Etching liquid is prepared by adding a cationic surfactant, an amphoteric surfactant, or an organic macromolecular compound having polar groups, to an aqueous solution of NH<SB>4</SB>OH, NaOH, KOH, or ethylenediamine. After making the temperature of the etching liquid to 20 to 60°C, the silicon wafer is immersed into the etching liquid to carry out etching. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004048026(A) 申请公布日期 2004.02.12
申请号 JP20030209230 申请日期 2003.08.28
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 HARADA TAKESHI;TOMINAGA MASAAKI;KONDO HIDEYUKI;TAKAISHI KAZUNARI;ENDO MITSUHIRO
分类号 H01L21/308;(IPC1-7):H01L21/308 主分类号 H01L21/308
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