| 摘要 |
PROBLEM TO BE SOLVED: To achieve an ultra high-speed operation and high quantum efficiency, and to improve reliability and manufacturing properties regarding a semiconductor light-receiving element. SOLUTION: A low electric field region 2 where an electric field in which electrons 7 can travel at a high speed is provided at one side of a light-absorbing layer 3. A high electric field region 4 where an electric field is applied so that a positive hole 8 can travel at a high speed is applied is formed at the other side of the light absorption layer 3. Then an n-type doped semiconductor layer is used as the light-absorbing layer 3 in the semiconductor light-receiving element being composed to eliminate an increase or decrease in carriers due to an avalanche phenomenon in the low electric field region 2 and the high electric field region 4. COPYRIGHT: (C)2004,JPO
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