METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To equalize the concentration of fluorine in a plurality of films formed, in a fluoridation silicon oxide film forming process, by a high-density plasma CVD method even if the frequency of the cleaning and precoating of a reaction chamber are decreased as low as possible. SOLUTION: The manufacturing method comprises steps of depositing a film containing fluorine by placing a semiconductor wafer in the reaction chamber (1); taking out the film-deposited semiconductor wafer from the reaction chamber (2); depositing a film which does not contain fluorine in the reaction chamber after taking out the semiconductor wafer (3); depositing a film containing fluorine by placing the other semiconductor wafer in the reaction chamber (4); taking out the other film-deposited semiconductor from the reaction chamber (5); further repeating the steps (3) to (5) by 0 or more number of times (6); cleaning in the reaction chamber after that to deposit a film which does not contain fluorine inside the reaction chamber (7). COPYRIGHT: (C)2004,JPO