| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory and its writing method by which a writing speed can be increased. SOLUTION: A pad 52 for connecting bit lines 45 of the magnetic random access memory to the outside is provided. At the time of writing, a writing current can be directly supplied from an external writing device. Since writing can be performed by directly passing currents through several bit lines from outside, the writing speed is higher than that in the case of selecting bit lines one by one. COPYRIGHT: (C)2004,JPO
|
