OXIDE SEMICONDUCTOR SUPER-LATTICE AND DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a hetero super-lattice structure having a steep interface which suppresses the diffusion of alkaline metal from a barrier layer in an oxide semiconductor super-lattice structure, and a highly efficient inter-subband transition device employing the same. SOLUTION: The oxide semiconductor super-lattice comprises an oxide barrier layer (LiGaO2barrier layer 12 for example) containing a zinc oxide base semiconductor well layer (ZnO well layer 11, for example) and an LA base alkaline metal while at least either phosphorus or boron is added into the zinc oxide base semiconductor well layer. Further, a phosphorus oxide layer or a boron oxide layer is formed between the zinc oxide base semiconductor well layer and the oxide barrier layer in an oxide semiconductor super-lattice. COPYRIGHT: (C)2004,JPO