发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A trench isolation region separating active regions in which MISFETs are formed includes: side insulating films covering the sides of a trench; polycrystalline semiconductor layers of a first conductivity type covering the respective sides of the side insulating films, and a polycrystalline semiconductor layer of a second conductivity type filling a gap between the polycrystalline semiconductor layers of the first conductivity type. Two pn junctions extending along the depth direction of the trench are formed between each of the polycrystalline semiconductor layers of the first conductivity type and the polycrystalline semiconductor layer of the second conductivity type. Upon application of a voltage between the active regions, a depletion layer expands in one of the pn junctions, so that the voltage is also partly applied to the depletion layer. As a result, the concentration of electric field in the side insulating films is relaxed.
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申请公布号 |
US2004026746(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030636653 |
申请日期 |
2003.08.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAZAWA SATOSHI;OUCHI SATORU;UEMOTO YASUHIRO |
分类号 |
H01L21/762;H01L21/84;H01L27/12;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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