| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for depositing a metal film of a lower electrode by a chemical vapor deposition process which can suppress the recrystallization of the metal film. <P>SOLUTION: The method for depositing the film includes a step of growing the metal film as the lower electrode of a capacitor on a film-forming region on a substrate to be treated, a step of heating the substrate at 350-500°C in a non-oxidative atmosphere, a step of growing a dielectric film on the film-forming region on the metal film, and a step of heat-treating the substrate at 600°C or higher. By this method, the crystal grains of the metal film is crystal-grown to a stable state by preheat treatment, and hence, crystal grain growth at the heat treatment is suppressed. Thus, a dielectric film of high quality can be deposited without imparting defects to a brittle dielectric film. <P>COPYRIGHT: (C)2004,JPO |
