| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad of a monolayer integrally molded by reaction injection molding suitably used for Chemical Mechanical Polishing (CMP) of a semiconductor wafer, and attaining superior level difference relieving performance and in-plane uniformity. <P>SOLUTION: A required-shaped polyurethane foaming body 12 is obtained by molding a gas dissolved raw material of dissolving inert gas in a polyurethane resin raw material under pressurization by a reaction injection molding method, and is composed of a polishing area 14 having a polishing surface 14a suitable for polishing a semiconductor material and having Shore hardness falling within a range of 40 to 80 and a stress relieving area 16 existing on the opposite side of the polishing surface 14a and setting a deflection quantity when applying a load of 0.05 MPa to 15 μm or more by arranging a stress adjusting part 22 of a required pattern. <P>COPYRIGHT: (C)2004,JPO |
