发明名称 PLASMA PROCESSING APPARATUS AND METHOD OF INITIALIZING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device which is efficiently set up and is shifted to another process, and is capable of preventing generation of particles from occurring. <P>SOLUTION: A semiconductor wafer mount 100 is equipped with a susceptor 153 of, for instance, AlN or the like and a dielectric member 180 formed of, for instance, SiO<SB>2</SB>or the like and is shaped so as to cover the entire susceptor 153. The dielectric member 180 is subjected to plasma processing for a certain time without mounting semiconductor wafer 1 so as to enable the plasma processing device to be efficiently set up, and shifted to another process, and to prevent generation of particles from occurring. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004047500(A) 申请公布日期 2004.02.12
申请号 JP20020156785 申请日期 2002.05.30
申请人 TOKYO ELECTRON LTD 发明人 IKEDA TARO;IIZUKA YASHIRO;YAMAMOTO KAORU
分类号 H05H1/46;C23C16/44;H01L21/205;H01L21/3065 主分类号 H05H1/46
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