| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic attracting structure which can rapidly and stably release a material to be processed, and to provide a method for electrostatically attracting, an apparatus and a method for plasma processing. SOLUTION: The method for electrostatically attracting includes the steps of respectively applying dc voltages of different polarities from each other to a pair of electrodes 26a, 26b embedded in a dielectric 25, and attracting a wafer W onto the dielectric 25. The wafer W attracted to the dielectric 25 is plasma processed, and then application of a chuck voltage is stopped by turning off a power supply switch 30. After a predetermined time, a residual charge is subjected to natural extinguishing, a lift pin 22 is then raised to release the wafer W. The wafer W is conveyed out from the pin. Thereafter, a new wafer W is placed on the dielectric and is processed in an attracted state. Here, a controller 100 switches the polarity of applied voltage by a polarity changing switch 31, each time a single wafer W is processed. COPYRIGHT: (C)2004,JPO |
