| 摘要 |
A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.
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