发明名称 Semiconductor integrated circuit device
摘要 In a semiconductor integrated circuit device, an n-channel transistor area has an area A on a pad side and an area B on an internal circuit side, where a plurality of protective elements are connected in parallel between a signal line and a power supply line. Each of the protective elements has resistors. Resistance of the resistors in the area A is set higher than resistance of the resistors in the area B by a value corresponding to resistance of parasitic resistance of the signal line included in the area A so that the resistance of the protective elements in the areas A and B are the same or almost the same as each other. A p-channel transistor area has the same configuration as that of the p-channel transistor area.
申请公布号 US2004026741(A1) 申请公布日期 2004.02.12
申请号 US20030633544 申请日期 2003.08.05
申请人 FUJITSU LIMITED 发明人 SAITO NORIAKI;AIZAWA KATSUAKI;KITANI KAZUHIRO
分类号 H01L27/04;G11C7/24;H01L21/822;H01L21/8238;H01L23/60;H01L23/62;H01L27/00;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 主分类号 H01L27/04
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