发明名称 |
Semiconductor integrated circuit device |
摘要 |
In a semiconductor integrated circuit device, an n-channel transistor area has an area A on a pad side and an area B on an internal circuit side, where a plurality of protective elements are connected in parallel between a signal line and a power supply line. Each of the protective elements has resistors. Resistance of the resistors in the area A is set higher than resistance of the resistors in the area B by a value corresponding to resistance of parasitic resistance of the signal line included in the area A so that the resistance of the protective elements in the areas A and B are the same or almost the same as each other. A p-channel transistor area has the same configuration as that of the p-channel transistor area.
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申请公布号 |
US2004026741(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030633544 |
申请日期 |
2003.08.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
SAITO NORIAKI;AIZAWA KATSUAKI;KITANI KAZUHIRO |
分类号 |
H01L27/04;G11C7/24;H01L21/822;H01L21/8238;H01L23/60;H01L23/62;H01L27/00;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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