发明名称 PHOTOMASK
摘要 Dummy patterns serving as sub-patterns are formed in virtual regions (2, 3). The numerical apertures of when only main patterns are formed in the virtual regions (2, 3) are 60 and 90%, respectively. The dummy pattern in the virtual region (2) is a light-shielding pattern of a rectangle having a side of 0.15 µm and the dummy pattern in the virtual pattern (3) is a light-shielding pattern of a rectangle having a side of 0.2 µm. The numerical apertures of the virtual regions (2, 3) are both 30%. When exposure using such a photomask is conducted, the amount of light produced by local flare is almost uniform at any point in the area where exposure light is applied on a photosensitive body. As a result, variation of the line width, even if caused, is uniform over the photomask.
申请公布号 WO2004013695(A1) 申请公布日期 2004.02.12
申请号 WO2003JP01772 申请日期 2003.02.19
申请人 FUJITSU LIMITED;YAO, TERUYOSHI;ASAI, SATORU 发明人 YAO, TERUYOSHI;ASAI, SATORU
分类号 G03F1/36;G03F1/68;G03F1/70;G03F7/20;H01L21/027 主分类号 G03F1/36
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