EXPOSURE SYSTEM AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent the deterioration of a resist pattern which is caused by outgas from a resist film that has been subjected to pattern exposure. SOLUTION: A wafer stage 3 for supporting a wafer 4 is provided at the bottom of a chamber 1. A first exposure optical system 5 for forming patterns, and a second exposure optical system 6 for detecting the outgas, are provided above the wafer stage 3. The optical system 5 carries out pattern exposure by selectively irradiating the resist film formed on the wafer 4 with extreme ultraviolet rays. The second optical system 6 carries out test exposure by locally irradiating the periphery of the resist film formed on the wafer 4 with extreme ultraviolet rays. An outgas detection means 7 for detecting the rate of the outgas from the resist film is provided at the side of the chamber 1. COPYRIGHT: (C)2004,JPO