| 摘要 |
An active matrix type display device is realized by integrally forming pixel electrodes and switching thin film transistors. The display device has a panel structure formed by a pair of substrates (1), (2) bonded to each other with a predetermined gap separating them and a liquid crystal layer (3) held in the gap between the pair of substrates. A set of thin film transistors (4), a planarizing film (5) covering said thin film transistors and a set of pixel electrodes arranged on the planarizing film (5) are formed on one of the substrates (1), whereas an opposite electrode is formed vis-a-vis the set of pixel electrodes on the other substrate (2). The planarizing film (5) of the display device is made of a photosensitive material and formed to show a varying thickness in the first substrate (1) by means of an exposure process. The parts of the planarizing film (5) that correspond to the pixel electrodes have a thickness that is made to vary according to the wavelength of the display colour assigned to each of the pixel electrodes.
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