| 摘要 |
PURPOSE: A method for fabricating a full complementary-metal-oxide-semiconductor(CMOS) static-random-access-memory(SRAM) device is provided to prevent cell area from increasing by forming an interconnection and a contact plug. CONSTITUTION: The first and second drive transistors are formed in the first active region(N1). The first and second transfer transistors(Q7,Q10) are formed in the second and third active regions(N2,N3), respectively. The first and second load transistors(Q9,Q12) are formed in the fourth active region(P1). The drain of the first load transistor, the drain of the first drive transistor(Q8) and the source of the first transfer transistor are interconnected by the first-a conductive layer interconnection(L1). The drain of the second load transistor, the drain of the second drive transistor(Q11) and the source of the second transfer transistor are interconnected by the first-b conductive layer interconnection(L2). The first-c conductive layer interconnection(L3) is formed to connect the source of the first drive transistor with the source of the second drive transistor and to connect the gate of the first transfer transistor with the gate of the second transfer transistor. The first-d conductive layer interconnection(L4) is formed to connect the source of the first load transistor with the source of the second load transistor and to connect the gate of the first load transistor with the gate of the second load transistor. The first-e conductive layer interconnection is formed in the source region of the first transfer transistor, and the first-f conductive layer interconnection(L6) is formed in the source region of the second transfer transistor.
|
